Single-electron random-number generator (RNG) for highly secure ubiquitous computing applicationsUCHIDA, Ken; TANAMOTO, Tetsufumi; OHBA, Ryuji et al.IEDm : international electron devices meeting. 2002, pp 177-180, isbn 0-7803-7462-2, 4 p.Conference Paper

A floating gate single electron memory device with Al₂O₃ tunnel barriersYADAVALLI, Kameshwar K; ANDERSON, Nicolas R; ORLOVA, Tatiana A et al.DRC : Device research conference. 2004, pp 97-98, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Optical implementation of parallel fuzzy logic using a single electron trapping deviceHONGMEI JING; LIREN LIU; FENG QIAN et al.Optik (Stuttgart). 1999, Vol 110, Num 10, pp 471-475, issn 0030-4026Article

Excess Dissipation in a Single-Electron Box: The Sisyphus ResistancePERSSON, F; WILSON, C. M; SANDBERG, M et al.Nano letters (Print). 2010, Vol 10, Num 3, pp 953-957, issn 1530-6984, 5 p.Article

Surface-acoustic-wave single-electron interferometryRODRIQUEZ, Roberta; OI, Daniel K. L; KATAOKA, Masaya et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 085329.1-085329.4, issn 1098-0121Article

Fabrication of complimentary single-electron inverter in single-wall carbon nanotubesTSUYA, D; SUZUKI, M; AOYAGI, Y et al.DRC : Device research conference. 2004, pp 57-58, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

La conquête de l'espace infinitésimal = The conquest of infinitesimal spaceROUKES, Michael.Pour la science. 2001, Num 290, pp 46-51, issn 0153-4092Article

Charge transport and single-electron effects in nanoscale systemsTHIJSSEN, J. M; VAN DER ZANT, H. S. J.Physica status solidi. B. Basic research. 2008, Vol 245, Num 8, pp 1455-1470, issn 0370-1972, 16 p.Article

Influence of the electromagnetic environment on the accuracy of the single electron pumpBUBANJA, Vladimir.Journal of the Physical Society of Japan. 2002, Vol 71, Num 6, pp 1501-1505, issn 0031-9015, 5 p.Article

Charge offset stability in Si single electron devices with Al gatesZIMMERMAN, Neil M; YANG, Chih-Hwan; NAI SHYAN LAI et al.Nanotechnology (Bristol. Print). 2014, Vol 25, Num 40, issn 0957-4484, 405201.1-405201.5Article

Coherence and Indistinguishability of Single Electrons Emitted by Independent SourcesBOCQUILLON, E; FREULON, V; BERROIR, J.-M et al.Science (Washington, D.C.). 2013, Vol 339, Num 6123, pp 1054-1057, issn 0036-8075, 4 p.Article

A simple electron multiplexerDOBRZYNSKI, L; AKJOUJ, A; DJAFARI-ROUHANI, B et al.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 43, pp L649-L653, issn 0953-8984Article

Fabrication of Cr nanostructures with the scanning tunnelling microscopeXIE, W; DAI, X; XU, L. S et al.Nanotechnology (Bristol. Print). 1997, Vol 8, Num 2, pp 88-93, issn 0957-4484Article

Artificial atomsKASTNER, M. A.RLE Progress report. 1995, Num 138, pp 49-54, issn 0163-9218Article

Quantum Dots at Room Temperature Carved out from Few-Layer GrapheneBARREIRO, Amelia; VAN DER ZANT, Herre S. J; VANDERSYPEN, Lieven M. K et al.Nano letters (Print). 2012, Vol 12, Num 12, pp 6096-6100, issn 1530-6984, 5 p.Article

Bidirectional counting of single electronsFUJISAWA, Toshimasa; HAYASHI, Toshiaki; TOMITA, Ritsuya et al.Science (Washington, D.C.). 2006, Vol 312, Num 5780, pp 1634-1636, issn 0036-8075, 3 p.Article

A planar Penning trapSTAHL, S; GALVE, F; ALONSO, J et al.The European physical journal. D, Atomic, molecular and optical physics (Print). 2005, Vol 32, Num 1, pp 139-146, issn 1434-6060, 8 p.Article

Practical aspects of electron transport through single moleculesSEMINARIO, Jorge M.IEEE conference on nanotechnology. 2004, pp 518-520, isbn 0-7803-8536-5, 1Vol, 3 p.Conference Paper

State diagram simulations of SET circuits using SPICEVAN DE HAAR, Rudie; HOEKSTRA, Jaap.Proceedings - Electrochemical Society. 2003, pp 205-214, issn 0161-6374, isbn 1-56677-389-X, 10 p.Conference Paper

A capacitance standard based on counting electronsKELLER, M. W; EICHENBERGER, A. L; MARTINIS, J. M et al.Science (Washington, D.C.). 1999, Vol 285, Num 5434, pp 1706-1709, issn 0036-8075Article

Parallel optical logic processor and bit slice-full adder using a single electron trapping deviceHAO RUAN; SHUCHUN CHENG; FUXIG AN et al.Optics and laser technology. 1998, Vol 30, Num 3-4, pp 175-182, issn 0030-3992Article

Single-electron transistor backaction on the single-electron boxTUREK, B. A; LEHNERT, K. W; CLERK, A et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 19, pp 193305.1-193305.4, issn 1098-0121Article

Composite pulses for quantum computation with trapped electronsSTORTINI, S; MARZOLI, I.The European physical journal. D, Atomic, molecular and optical physics (Print). 2005, Vol 32, Num 2, pp 209-213, issn 1434-6060, 5 p.Article

Switching in a reversible spin logic gateBANDYOPADHYAY, S; ROYCHOWDHURY, V. P.Superlattices and microstructures. 1997, Vol 22, Num 3, pp 411-416, issn 0749-6036Article

Single-electron spectroscopyASHOORI, R. C.RLE Progress report. 1995, Num 138, pp 95-102, issn 0163-9218Article